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Drain to Source Breakdown Voltage. Drain to Source Voltage Note 1.

Formerly developmental type TA Neither this Agreement, nor any of the rights or obligations herein, may be assigned or transferred by Licensee without the express prior written consent of ON Semiconductor, and dataeheet attempt to do so in violation of the foregoing shall be null and void. Derate Above 25 o C. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. Thermal Resistance Junction to Case.

G Datasheet PDF – Fairchild Semiconductor DATASHEETBANK

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G Datasheet PDF – Fairchild Semiconductor

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HUF75344G3: N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ

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It was designed for use in applications where power efficiency is datasheeet, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

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